Pịa-Pack IGBT
Pịa-mkpọ IGBT (IEGT)
| Ụdị | VDRM V | VRRM V | IT (AV)@80 ℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0,075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0,075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Mara:D- ya na diode akụkụ, A-enweghị akụkụ diode
N'otu oge, a na-etinye modul kọntaktị IGBT n'ime ihe ngbanwe nke sistemụ nnyefe DC na-agbanwe agbanwe.Ngwungwu modul bụ ikpo ọkụ otu akụkụ.Ikike ike nke ngwaọrụ nwere oke na ọ bụghị ihe kwesịrị ekwesị iji jikọta ya na usoro, ndụ adịghị mma na ikuku nnu, adịghị mma mgbochi mmaja ma ọ bụ ike ọgwụgwụ ọkụ.
The ọhụrụ ụdị pịa-kọntaktị elu-ike pịa-mkpọ IGBT ngwaọrụ bụghị nanị na-edozi nsogbu nke ohere ohere na soldering usoro, thermal ike ọgwụgwụ nke soldering ihe na ala arụmọrụ nke otu akụkụ okpomọkụ dissipation ma na-ewepụkwa thermal iguzogide n'etiti dị iche iche components, wedata nha na ibu.Ma kwalite arụmọrụ na ntụkwasị obi nke ngwaọrụ IGBT nke ọma.Ọ mara mma nke ọma iji mejuo ike dị elu, nnukwu voltaji, ihe ntụkwasị obi dị elu nke usoro nnyefe DC na-agbanwe agbanwe.
Ndochi ụdị kọntaktị solder site na pịa-mkpọ IGBT dị mkpa.
Ebe ọ bụ na 2010, Runau Electronics e elaborated iji mepụta ọhụrụ ụdị pịa-mkpọ IGBT ngwaọrụ na ịga nke ọma mmepụta na 2013. The arụmọrụ e gbaara site mba iru eru na bee-ọnụ rụzuru e dechara.
Ugbu a, anyị nwere ike rụpụta na inye usoro pịa-mkpọ IGBT nke IC nso na 600A ka 3000A na VCES nso na 1700V ka 6500V.Atụmanya mara mma nke mkpọ IGBT emebere na China ka etinyere ya na China na-atụ anya sistemụ nnyefe DC na-agbanwe agbanwe na ọ ga-abụ nnukwu igwe igwe igwe ọzọ nke ụwa nke China ike elektrọnik ụlọ ọrụ mgbe ụgbọ oloko eletrik dị elu.
Ụdị Okwu Mmalite dị nkenke:
1. Ụdị: Pịa-mkpọ IGBT CSG07E1700
●Njirimara eletrik mgbe nkwakọ ngwaahịa na ịpị
● tụgharịayiriejikọrọngwa ngwa mgbake diodekwubiri
● Parameter:
Ọnụ ahịa ruru (25℃)
a.Voltage onye na-anakọta Emitter: VGES=1700 (V)
b.Voltage ọnụ ụzọ Emitter: VCES=± 20 (V)
c.Onye nchịkọta ugbu a: IC = 800 (A) ICP = 1600 (A)
d.Mgbasa ike onye nchịkọta: PC=4440 (W)
e.Okpomọkụ Junction na-arụ ọrụ: Tj=－20 ~ 125℃
f.Okpomọkụ nchekwa: Tstg=－40~125℃
Amara: ngwaọrụ ga-emebi ma ọ bụrụ na ọ gafechara ọnụ ahịa
EletrikiCHaracteristics, TC 125 ℃, Rth (thermal iguzogidenjikọ naikpe)etinyeghị ya
a.Ọnụ ụzọ mgbapụ ugbu a: IGES=±5（μA）
b.Onye nchịkọta Emitter na-egbochi ICES ugbu a = 250 (mA)
c.Voltage saturation nke mkpokọta Emitter: VCE(nọdụ)=6(V)
d.Voltaji ọnụ ụzọ Emitter: VGE(th)=10(V)
e.Gbanwee oge: Ton = 2.5μs
f.Gbanyụọ oge: Toff=3μs
2. Ọnọdụ: Pịa-mkpọ IGBT CSG10F2500
●Njirimara eletrik mgbe nkwakọ ngwaahịa na ịpị
● tụgharịayiriejikọrọngwa ngwa mgbake diodekwubiri
● Parameter:
Ọnụ ahịa ruru (25℃)
a.Voltage onye na-anakọta Emitter: VGES=2500（V）
b.Voltage ọnụ ụzọ Emitter: VCES=± 20 (V)
c.Onye nchịkọta ugbu a: IC = 600 (A) ICP = 2000 (A)
d.Mgbasa ike nke mkpokọta: PC=4800 (W)
e.Okpomọkụ Junction na-arụ ọrụ: Tj=－40 ~ 125℃
f.Okpomọkụ nchekwa: Tstg=－40~125℃
Amara: ngwaọrụ ga-emebi ma ọ bụrụ na ọ gafechara ọnụ ahịa
EletrikiCHaracteristics, TC 125 ℃, Rth (thermal iguzogidenjikọ naikpe)etinyeghị ya
a.Ọnụ ụzọ mgbapụ ugbu a: IGES=± 15（μA）
b.Onye nchịkọta Emitter na-egbochi ICES ugbu a = 25 (mA)
c.Voltage saturation nke mkpokọta Emitter: VCE(nọdụ)=3.2 (V)
d.Voltaji ọnụ ụzọ Emitter: VGE(th)=6.3(V)
e.Gbanwee oge: Ton = 3.2μs
f.Gbanyụọ oge: Toff=9.8μs
g.Voltage-ebugharị diode: VF=3.2V
h.Oge mgbake Diode: Trr=1.0 μs
3. Ọnọdụ: Pịa-mkpọ IGBT CSG10F4500
●Njirimara eletrik mgbe nkwakọ ngwaahịa na ịpị
● tụgharịayiriejikọrọngwa ngwa mgbake diodekwubiri
● Parameter:
Ọnụ ahịa ruru (25℃)
a.Voltage onye na-anakọta Emitter: VGES=4500 (V)
b.Voltage ọnụ ụzọ Emitter: VCES=± 20 (V)
c.Onye nchịkọta ugbu a: IC = 600 (A) ICP = 2000 (A)
d.Mgbasa ike nke mkpokọta: PC=7700 (W)
e.Okpomọkụ Junction na-arụ ọrụ: Tj=－40 ~ 125℃
f.Okpomọkụ nchekwa: Tstg=－40~125℃
Amara: ngwaọrụ ga-emebi ma ọ bụrụ na ọ gafechara ọnụ ahịa
EletrikiCHaracteristics, TC 125 ℃, Rth (thermal iguzogidenjikọ naikpe)etinyeghị ya
a.Ọnụ ụzọ mgbapụ ugbu a: IGES=± 15（μA）
b.Onye nchịkọta Emitter na-egbochi ICES ugbu a = 50 (mA)
c.Voltaji saturation nke mkpokọta Emitter: VCE(nọdụ)=3.9 (V)
d.Voltaji ọnụ ụzọ Emitter: VGE(th)=5.2 (V)
e.Gbanwee oge: Ton = 5.5μs
f.Gbanyụọ oge: Toff=5.5μs
g.Voltage-ebugharị diode: VF=3.8V
h.Oge mgbake Diode: Trr=2.0 μs
Mara:Press-mkpọ IGBT bụ uru na ogologo oge elu n'ibu ntụkwasị obi, elu iguzogide mmebi na àgwà nke pịa njikọ Ọdịdị, adabara na-arụrụ ọrụ na usoro ngwaọrụ, na tụnyere na omenala GTO thyristor, IGBT bụ voltaji-mbanye usoro. .Ya mere, ọ dị mfe iji rụọ ọrụ, nchekwa na oke ọrụ.